Overview of Nitride Semiconductors

Nanosphere Lithography for Nitride Semiconductors

Polarons in Wurtzite Nitride Semiconductors

Polaron binding energy and effective mass are calculated for semiconductors with wurtzite crystalline structure from the first order electron-phonon corrections to the self-energy. A recently introduced Fröhlich-like electron-phonon interaction Hamiltonian which accounts for the LO and TO polarizations mixing due to the anisotropy is used in the calculation. The polaronic damping rates are eval...

Application of Atom Probe Tomography to Nitride Semiconductors

A decade ago, atom probe tomography (APT) was applied almost exclusively to the study of metals, since the study of materials with lower conductivities, such as semiconductors, was considered pragmatically to be very difficult. The advent of commercially-available laser-pulsed APT systems has since enabled the increasingly widespread application of APT to semiconductors, with particularly notab...

Cathodoluminescence Hyperspectral Imaging of Nitride Semiconductors: Introducing New Variables

Cathodoluminescence (CL) hyperspectral imaging—the acquisition of a full optical emission spectrum at each pixel of an image—has become firmly established as a measurement mode in scanning electron microscopy (SEM) [1]. CL is sensitive to the structural, compositional and electrical properties of a sample, and the inherent multimode nature of SEM makes it possible to combine CL with other techn...

Reduced Hamiltonian for Electronic States of Dilute Nitride Semiconductors

We present a novel model to describe conduction band of GaNxAs1−x (GaNAs). As well known, GaNAs shows exotic behavior such as large band gap bowing. Although there are various models to describe the conduction band of GaNAs, origin of the band gap bowing is still under debate. On the basis of perturbation theory, we show that the behavior of conduction band is mainly arising from intervalley mi...